Tunnel Diode: Difference between revisions
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'''''This article is a stub. You can help the | '''''This article is a stub. You can help the ETHW by expanding it.''''' | ||
Tokyo, Japan. In 1958, [[Leo Esaki|Leo Esaki]] publishes his invention of the Tunnel Diode, a highly flexible, very fast [[Semiconductors|semiconductor]] [[Diode|diode]], where current diminishes as voltage increases. The device became widely used in a tremendous variety of products. | Tokyo, Japan. In 1958, [[Leo Esaki|Leo Esaki]] publishes his invention of the Tunnel Diode, a highly flexible, very fast [[Semiconductors|semiconductor]] [[Diode|diode]], where current diminishes as voltage increases. The device became widely used in a tremendous variety of products. | ||
[[Category: | [[Category:Computing and electronics]] | ||
[[Category:Electronic_components]] | |||
[[Category:Diodes]] | |||
[[Category:Materials]] | |||
[[Category:Conductivity_&_superconductivity]] | |||
[[Category:Semiconductor_materials]] | |||
{{Timeline | |||
|Date=1/1/1958 | |||
|Priority=Electrical | |||
|Description=In 1958, in Tokyo, Japan, Leo Esaki published his invention of the Tunnel Diode, a highly flexible, very fast semiconductor diode, where current diminishes as voltage increases. The device became widely used in a tremendous variety of products. | |||
}} | |||
Latest revision as of 06:46, 23 November 2017
This article is a stub. You can help the ETHW by expanding it.
Tokyo, Japan. In 1958, Leo Esaki publishes his invention of the Tunnel Diode, a highly flexible, very fast semiconductor diode, where current diminishes as voltage increases. The device became widely used in a tremendous variety of products.
