Semiconductor Laser: Difference between revisions
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'''''This article is a stub. You can help the GHN by expanding it.''''' | '''''This article is a stub. You can help the GHN by expanding it.''''' | ||
"In September 1962 researchers from IBM, independently and almost simultaneously with researchers from [[General Electric (GE|General Electric]] and MIT's Lincoln Laboratory, demonstrated [[Laser|laser]] action in the semiconductor gallium arsenide" | "In September 1962 researchers from IBM, independently and almost simultaneously with researchers from [[General Electric (GE)|General Electric]] and MIT's Lincoln Laboratory, demonstrated [[Laser|laser]] action in the semiconductor gallium arsenide" | ||
[[Category:Lasers,_lighting_&_electrooptics|Category:Lasers,_lighting_&_electrooptics]] [[Category:Lasers]] [[Category:Semiconductor_lasers]] | [[Category:Lasers,_lighting_&_electrooptics|Category:Lasers,_lighting_&_electrooptics]] [[Category:Lasers]] [[Category:Semiconductor_lasers]] | ||
Revision as of 17:08, 4 February 2009
This article is a stub. You can help the GHN by expanding it.
"In September 1962 researchers from IBM, independently and almost simultaneously with researchers from General Electric and MIT's Lincoln Laboratory, demonstrated laser action in the semiconductor gallium arsenide"
