Milestones:IBM Thomas J. Watson Research Center, 1960 - 1984: Difference between revisions
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IBM Thomas J. Watson Research Center, 1960 - 1984 | |||
In its first quarter century, the IBM Thomas J. Watson Research Center produced numerous seminal advances having sustained worldwide impact in electrical engineering and computing. Semiconductor device innovations include dynamic random access memory (DRAM), superlattice crystals, and field effect transistor (FET) scaling laws. Computing innovations include reduced instruction set computer (RISC) architecture, integer programming, amorphous magnetic films for optical storage technology, and thin-film magnetic recording heads.<br> | |||
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Revision as of 18:04, 26 October 2009
IBM Thomas J. Watson Research Center, 1960 - 1984
In its first quarter century, the IBM Thomas J. Watson Research Center produced numerous seminal advances having sustained worldwide impact in electrical engineering and computing. Semiconductor device innovations include dynamic random access memory (DRAM), superlattice crystals, and field effect transistor (FET) scaling laws. Computing innovations include reduced instruction set computer (RISC) architecture, integer programming, amorphous magnetic films for optical storage technology, and thin-film magnetic recording heads.
