IEEE Reynold B. Johnson Data Storage Device Technology Award: Difference between revisions

From ETHW
(Created page with "== About Award == The IEEE Reynold B. Johnson Data Storage Device Technology Award was established in 2004 and was presented for the first time in 2006. The technical field for ...")
 
No edit summary
Line 22: Line 22:
*2006, [[Eliyahou Harari|Eliyahou Harari]], [[Sanjay Mehrotra|Sanjay Mehrotra]], [[Jack Yuan|Jack Yuan]], “For leadership in the development and commercialization of Flash electrically erasable programmable read-only memory-based data storage products.”
*2006, [[Eliyahou Harari|Eliyahou Harari]], [[Sanjay Mehrotra|Sanjay Mehrotra]], [[Jack Yuan|Jack Yuan]], “For leadership in the development and commercialization of Flash electrically erasable programmable read-only memory-based data storage products.”


[[Category:Awards_&_fellow_activities]]
[[Category:Awards & fellow activities|Reynold]]

Revision as of 15:08, 27 January 2012

About Award

The IEEE Reynold B. Johnson Data Storage Device Technology Award was established in 2004 and was presented for the first time in 2006. The technical field for this award are significant advances in storage device technology engineering, research, leadership, or education; leading to the development of commercial data storage devices. Recipient selection is administered by the Technical Field Awards Council of the IEEE Awards Board. The award was discontinued by the IEEE Board of Directors in 2011.

Presented to: An individual, multiple recipients, or a team of not more than three.

Sponsor: Hitachi Global Storage Technologies

Scope: For outstanding contributions to the advancement of information storage with emphasis on technical contributions in computer data storage device technology.

Prize: The award consists of a bronze medal, certificate and honorarium.

Basis for judging: In the evaluation process, the following criteria are considered: significant advances in storage device technology engineering, research, leadership, education, leading to the development of commercial data storage devices, and the quality of the nomination.

Award Recipients

  • 2010, David Bogy, “For leadership, education and technical contributions in the mechanics and tribiology of magnetic recording disk drives.”
  • 2009, Kinam Kim, “For leadership in and contribution to semiconductor memory technology which enabled the growth of low cost consumer data storage devices.”
  • 2008, Stanley H. Charap, “For quantative prediction of the superparamagnetic limit for magnetic recording.”
  • 2007, Mason Williams, “For contributions to the modeling and design of high density magnetic recording.”
  • 2006, Eliyahou Harari, Sanjay Mehrotra, Jack Yuan, “For leadership in the development and commercialization of Flash electrically erasable programmable read-only memory-based data storage products.”