Chang-Gyu Hwang: Difference between revisions
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{{Biography | |||
|Image=Hwang Chang-Gyu.jpg | |||
|Associated organizations=Samsung | |||
|Fields of study=Computing | |||
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As president and chief executive officer of the Semiconductor Business of Samsung Electronics Co., Ltd., Dr. Chang-Gyu Hwang has been the driving force in establishing Samsung as a leading global developer and supplier of random access memory, including dynamic (DRAM), and non-volatile memories, NAND flash memory choices. | As president and chief executive officer of the Semiconductor Business of Samsung Electronics Co., Ltd., Dr. Chang-Gyu Hwang has been the driving force in establishing Samsung as a leading global developer and supplier of random access memory, including dynamic (DRAM), and non-volatile memories, NAND flash memory choices. | ||
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Dr. Hwang has co-authored more than 50 technical papers for journals and conferences and speaks frequently on industry trends before many academic and industry groups. | Dr. Hwang has co-authored more than 50 technical papers for journals and conferences and speaks frequently on industry trends before many academic and industry groups. | ||
[[Category: | [[Category:Computing and electronics]] [[Category:Memory]] [[Category:Random access memory]] | ||
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Latest revision as of 15:36, 20 January 2016
Biography
As president and chief executive officer of the Semiconductor Business of Samsung Electronics Co., Ltd., Dr. Chang-Gyu Hwang has been the driving force in establishing Samsung as a leading global developer and supplier of random access memory, including dynamic (DRAM), and non-volatile memories, NAND flash memory choices.
Dr. Hwang’s leadership was critical to Samsung’s creation of the first 256M, 1G and 4G DRAMs. He had a key role in developing NAND flash memory chips now commonly used in memory cards, USB flash drives, MP3 players, digital cameras and mobile telephones.
In 2002, he predicted that memory consumption and high-density memory use in mobile handsets and other consumer applications would grow faster with the advent of nanotechnology,based on keen insight on the vast potential of NAND flash memory.
Dr. Hwang has co-authored more than 50 technical papers for journals and conferences and speaks frequently on industry trends before many academic and industry groups.
