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Tunnel Diode

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'''''This article is a stub. You can help the GHN by expanding it.'''''  
 
'''''This article is a stub. You can help the GHN by expanding it.'''''  
  
Tokyo, Japan. In 1958, Leo Esaki publishes his invention of the Tunnel Diode, a highly flexible, very fast semiconductor diode, where current diminishes as voltage increases. The device became widely used in a tremendous variety of products.
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Tokyo, Japan. In 1958, [[Leo Esaki|Leo Esaki]] publishes his invention of the Tunnel Diode, a highly flexible, very fast [[Semiconductors|semiconductor]] [[Diode|diode]], where current diminishes as voltage increases. The device became widely used in a tremendous variety of products.
  
[[Category:Components%2C_circuits%2C_devices_%26_systems]]
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[[Category:Components,_circuits,_devices_&_systems]]
 
[[Category:Electronic_components]]
 
[[Category:Electronic_components]]
 
[[Category:Diodes]]
 
[[Category:Diodes]]
[[Category:Engineered_materials_%26_dielectrics]]
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[[Category:Engineered_materials_&_dielectrics]]
[[Category:Conductivity_%26_superconductivity]]
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[[Category:Conductivity_&_superconductivity]]
 
[[Category:Semiconductor_materials]]
 
[[Category:Semiconductor_materials]]

Revision as of 16:01, 2 March 2012

This article is a stub. You can help the GHN by expanding it.

Tokyo, Japan. In 1958, Leo Esaki publishes his invention of the Tunnel Diode, a highly flexible, very fast semiconductor diode, where current diminishes as voltage increases. The device became widely used in a tremendous variety of products.