Tunnel Diode: Difference between revisions
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'''''This article is a stub. You can help the GHN by expanding it.''''' | '''''This article is a stub. You can help the GHN by expanding it.''''' | ||
Tokyo, Japan. In 1958, Leo Esaki publishes his invention of the Tunnel Diode, a highly flexible, very fast semiconductor diode, where current diminishes as voltage increases. The device became widely used in a tremendous variety of products. | Tokyo, Japan. In 1958, [[Leo Esaki|Leo Esaki]] publishes his invention of the Tunnel Diode, a highly flexible, very fast [[Semiconductors|semiconductor]] [[Diode|diode]], where current diminishes as voltage increases. The device became widely used in a tremendous variety of products. | ||
[[Category:Components | [[Category:Components,_circuits,_devices_&_systems]] | ||
[[Category:Electronic_components]] | [[Category:Electronic_components]] | ||
[[Category:Diodes]] | [[Category:Diodes]] | ||
[[Category:Engineered_materials_ | [[Category:Engineered_materials_&_dielectrics]] | ||
[[Category:Conductivity_ | [[Category:Conductivity_&_superconductivity]] | ||
[[Category:Semiconductor_materials]] | [[Category:Semiconductor_materials]] | ||
Revision as of 16:01, 2 March 2012
This article is a stub. You can help the GHN by expanding it.
Tokyo, Japan. In 1958, Leo Esaki publishes his invention of the Tunnel Diode, a highly flexible, very fast semiconductor diode, where current diminishes as voltage increases. The device became widely used in a tremendous variety of products.
