Tunnel Diode
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(New page: '''''This article is a stub. You can help the GHN by expanding it.''''' Tokyo, Japan. In 1958, Leo Esaki publishes his invention of the Tunnel Diode, a highly flexible, very fast semicond...) |
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| − | '''''This article is a stub. You can help the GHN by expanding it.''''' | + | '''''This article is a stub. You can help the GHN by expanding it.''''' |
| − | Tokyo, Japan. In 1958, Leo Esaki publishes his invention of the Tunnel Diode, a highly flexible, very fast semiconductor diode, where current diminishes as voltage increases. The device became widely used in a tremendous variety of products. | + | Tokyo, Japan. In 1958, [[Leo Esaki|Leo Esaki]] publishes his invention of the Tunnel Diode, a highly flexible, very fast [[Semiconductors|semiconductor]] [[Diode|diode]], where current diminishes as voltage increases. The device became widely used in a tremendous variety of products. |
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| + | [[Category:Components,_circuits,_devices_&_systems]] | ||
| + | [[Category:Electronic_components]] | ||
| + | [[Category:Diodes]] | ||
| + | [[Category:Engineered_materials_&_dielectrics]] | ||
| + | [[Category:Conductivity_&_superconductivity]] | ||
| + | [[Category:Semiconductor_materials]] | ||
Latest revision as of 16:01, 2 March 2012
This article is a stub. You can help the GHN by expanding it.
Tokyo, Japan. In 1958, Leo Esaki publishes his invention of the Tunnel Diode, a highly flexible, very fast semiconductor diode, where current diminishes as voltage increases. The device became widely used in a tremendous variety of products.
