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Tunnel Diode

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(New page: '''''This article is a stub. You can help the GHN by expanding it.''''' Tokyo, Japan. In 1958, Leo Esaki publishes his invention of the Tunnel Diode, a highly flexible, very fast semicond...)
 
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'''''This article is a stub. You can help the GHN by expanding it.'''''
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'''''This article is a stub. You can help the GHN by expanding it.'''''  
  
 
Tokyo, Japan. In 1958, Leo Esaki publishes his invention of the Tunnel Diode, a highly flexible, very fast semiconductor diode, where current diminishes as voltage increases. The device became widely used in a tremendous variety of products.
 
Tokyo, Japan. In 1958, Leo Esaki publishes his invention of the Tunnel Diode, a highly flexible, very fast semiconductor diode, where current diminishes as voltage increases. The device became widely used in a tremendous variety of products.
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[[Category:Components%2C_circuits%2C_devices_%26_systems]]
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[[Category:Electronic_components]]
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[[Category:Diodes]]
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[[Category:Engineered_materials_%26_dielectrics]]
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[[Category:Conductivity_%26_superconductivity]]
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[[Category:Semiconductor_materials]]

Revision as of 16:03, 5 January 2009

This article is a stub. You can help the GHN by expanding it.

Tokyo, Japan. In 1958, Leo Esaki publishes his invention of the Tunnel Diode, a highly flexible, very fast semiconductor diode, where current diminishes as voltage increases. The device became widely used in a tremendous variety of products.