Tunnel Diode: Difference between revisions
From ETHW
(New page: '''''This article is a stub. You can help the GHN by expanding it.''''' Tokyo, Japan. In 1958, Leo Esaki publishes his invention of the Tunnel Diode, a highly flexible, very fast semicond...) |
No edit summary |
||
| Line 1: | Line 1: | ||
'''''This article is a stub. You can help the GHN by expanding it.''''' | '''''This article is a stub. You can help the GHN by expanding it.''''' | ||
Tokyo, Japan. In 1958, Leo Esaki publishes his invention of the Tunnel Diode, a highly flexible, very fast semiconductor diode, where current diminishes as voltage increases. The device became widely used in a tremendous variety of products. | Tokyo, Japan. In 1958, Leo Esaki publishes his invention of the Tunnel Diode, a highly flexible, very fast semiconductor diode, where current diminishes as voltage increases. The device became widely used in a tremendous variety of products. | ||
[[Category:Components%2C_circuits%2C_devices_%26_systems]] | |||
[[Category:Electronic_components]] | |||
[[Category:Diodes]] | |||
[[Category:Engineered_materials_%26_dielectrics]] | |||
[[Category:Conductivity_%26_superconductivity]] | |||
[[Category:Semiconductor_materials]] | |||
Revision as of 16:03, 5 January 2009
This article is a stub. You can help the GHN by expanding it.
Tokyo, Japan. In 1958, Leo Esaki publishes his invention of the Tunnel Diode, a highly flexible, very fast semiconductor diode, where current diminishes as voltage increases. The device became widely used in a tremendous variety of products.
