Tunnel Diode: Difference between revisions
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(New page: '''''This article is a stub. You can help the GHN by expanding it.''''' Tokyo, Japan. In 1958, Leo Esaki publishes his invention of the Tunnel Diode, a highly flexible, very fast semicond...) |
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'''''This article is a stub. You can help the GHN by expanding it.''''' | '''''This article is a stub. You can help the GHN by expanding it.''''' | ||
Tokyo, Japan. In 1958, Leo Esaki publishes his invention of the Tunnel Diode, a highly flexible, very fast semiconductor diode, where current diminishes as voltage increases. The device became widely used in a tremendous variety of products. | Tokyo, Japan. In 1958, [[Leo Esaki|Leo Esaki]] publishes his invention of the Tunnel Diode, a highly flexible, very fast [[Semiconductors|semiconductor]] [[Diode|diode]], where current diminishes as voltage increases. The device became widely used in a tremendous variety of products. | ||
[[Category:Computing and electronics]] | |||
[[Category:Electronic_components]] | |||
[[Category:Diodes]] | |||
[[Category:Materials]] | |||
[[Category:Conductivity_&_superconductivity]] | |||
[[Category:Semiconductor_materials]] | |||
Revision as of 15:20, 25 July 2014
This article is a stub. You can help the GHN by expanding it.
Tokyo, Japan. In 1958, Leo Esaki publishes his invention of the Tunnel Diode, a highly flexible, very fast semiconductor diode, where current diminishes as voltage increases. The device became widely used in a tremendous variety of products.
