Tunnel Diode: Difference between revisions
From ETHW
m (Text replace - "[[Category:Computers and information processing" to "[[Category:Computing and electronics") |
m (Text replace - "[[Category:Engineered_materials_&_dielectrics" to "[[Category:Materials") |
||
Line 6: | Line 6: | ||
[[Category:Electronic_components]] | [[Category:Electronic_components]] | ||
[[Category:Diodes]] | [[Category:Diodes]] | ||
[[Category: | [[Category:Materials]] | ||
[[Category:Conductivity_&_superconductivity]] | [[Category:Conductivity_&_superconductivity]] | ||
[[Category:Semiconductor_materials]] | [[Category:Semiconductor_materials]] |
Revision as of 15:20, 25 July 2014
This article is a stub. You can help the GHN by expanding it.
Tokyo, Japan. In 1958, Leo Esaki publishes his invention of the Tunnel Diode, a highly flexible, very fast semiconductor diode, where current diminishes as voltage increases. The device became widely used in a tremendous variety of products.