Tunnel Diode: Difference between revisions
From ETHW
m (Text replace - "[[Category:Components,_circuits,_devices_&_systems" to "[[Category:Computers and information processing") |
m (Text replace - "[[Category:Computers and information processing" to "[[Category:Computing and electronics") |
||
| Line 3: | Line 3: | ||
Tokyo, Japan. In 1958, [[Leo Esaki|Leo Esaki]] publishes his invention of the Tunnel Diode, a highly flexible, very fast [[Semiconductors|semiconductor]] [[Diode|diode]], where current diminishes as voltage increases. The device became widely used in a tremendous variety of products. | Tokyo, Japan. In 1958, [[Leo Esaki|Leo Esaki]] publishes his invention of the Tunnel Diode, a highly flexible, very fast [[Semiconductors|semiconductor]] [[Diode|diode]], where current diminishes as voltage increases. The device became widely used in a tremendous variety of products. | ||
[[Category: | [[Category:Computing and electronics]] | ||
[[Category:Electronic_components]] | [[Category:Electronic_components]] | ||
[[Category:Diodes]] | [[Category:Diodes]] | ||
Revision as of 16:02, 22 July 2014
This article is a stub. You can help the GHN by expanding it.
Tokyo, Japan. In 1958, Leo Esaki publishes his invention of the Tunnel Diode, a highly flexible, very fast semiconductor diode, where current diminishes as voltage increases. The device became widely used in a tremendous variety of products.
