Shinichi Takagi: Difference between revisions
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{{Biography | |||
|Associated organizations=University of Tokyo | |||
|Fields of study=Semiconductors | |||
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Shinichi Takagi has driven performance improvements in metal oxide semiconductor field-effect transistor (MOSFET) technology with his insight on behavior of carriers in semiconductor devices. Dr. Takagi’s “universal mobility model” has been a key enabler of the continued scaling of electronic components. First presented in 1988, his model has provided a common framework for understating the transport mobility of carriers in the MOSFET inversion layer. The model has become a world standard highly cited in research and an important component of device simulators. His work on subband engineering of inversion layers focusing on strained silicon MOSFETs has important implications for sub-100-nanometer technology nodes. Dr. Takagi is also among the pioneers investigating higher-mobility materials such as germanium that will help the continued scaling of MOSFET devices when silicon technologies reach their scaling limits. | Shinichi Takagi has driven performance improvements in metal oxide semiconductor field-effect transistor (MOSFET) technology with his insight on behavior of carriers in semiconductor devices. Dr. Takagi’s “universal mobility model” has been a key enabler of the continued scaling of electronic components. First presented in 1988, his model has provided a common framework for understating the transport mobility of carriers in the MOSFET inversion layer. The model has become a world standard highly cited in research and an important component of device simulators. His work on subband engineering of inversion layers focusing on strained silicon MOSFETs has important implications for sub-100-nanometer technology nodes. Dr. Takagi is also among the pioneers investigating higher-mobility materials such as germanium that will help the continued scaling of MOSFET devices when silicon technologies reach their scaling limits. | ||
An IEEE member, Dr. Takagi is a professor with the Department of Electrical Engineering and Information Systems in the School of Engineering at the University of Tokyo, Japan. | An IEEE member, Dr. Takagi is a professor with the Department of Electrical Engineering and Information Systems in the School of Engineering at the University of Tokyo, Japan. | ||
[[Category: | {{DEFAULTSORT:Takagi}} | ||
[[Category:Computing and electronics]] | |||
[[Category:Electron_devices]] | |||
[[Category:Semiconductor_devices]] | |||
Latest revision as of 19:20, 26 February 2016
- Associated organizations
- University of Tokyo
- Fields of study
- Semiconductors
Biography
Shinichi Takagi has driven performance improvements in metal oxide semiconductor field-effect transistor (MOSFET) technology with his insight on behavior of carriers in semiconductor devices. Dr. Takagi’s “universal mobility model” has been a key enabler of the continued scaling of electronic components. First presented in 1988, his model has provided a common framework for understating the transport mobility of carriers in the MOSFET inversion layer. The model has become a world standard highly cited in research and an important component of device simulators. His work on subband engineering of inversion layers focusing on strained silicon MOSFETs has important implications for sub-100-nanometer technology nodes. Dr. Takagi is also among the pioneers investigating higher-mobility materials such as germanium that will help the continued scaling of MOSFET devices when silicon technologies reach their scaling limits.
An IEEE member, Dr. Takagi is a professor with the Department of Electrical Engineering and Information Systems in the School of Engineering at the University of Tokyo, Japan.
