Semiconductor Laser: Difference between revisions
From ETHW
No edit summary |
No edit summary |
||
| Line 2: | Line 2: | ||
In September 1962 researchers from IBM, independently and almost simultaneously with researchers from [[General Electric (GE)|General Electric]] and MIT's Lincoln Laboratory, demonstrated [[Laser|laser]] action in the [[Semiconductors|semiconductor]] gallium arsenide. | In September 1962 researchers from IBM, independently and almost simultaneously with researchers from [[General Electric (GE)|General Electric]] and MIT's Lincoln Laboratory, demonstrated [[Laser|laser]] action in the [[Semiconductors|semiconductor]] gallium arsenide. | ||
[[Category:Semiconductor lasers|Laser]] | |||
Revision as of 20:38, 23 February 2012
This article is a stub. Please help expand the article by using the edit tab.
In September 1962 researchers from IBM, independently and almost simultaneously with researchers from General Electric and MIT's Lincoln Laboratory, demonstrated laser action in the semiconductor gallium arsenide.
