Semiconductor Laser: Difference between revisions

Revision as of 20:56, 14 December 2009

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In September 1962 researchers from IBM, independently and almost simultaneously with researchers from General Electric and MIT's Lincoln Laboratory, demonstrated laser action in the semiconductor gallium arsenide.

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-'''''This article is a stub. You can help the GHN by expanding it.'''''
+'''This article is a stub. Please help expand the article by using the edit tab.'''
-"In September 1962 researchers from IBM, independently and almost simultaneously with researchers from [[General Electric (GE)|General Electric]] and MIT's Lincoln Laboratory, demonstrated [[Laser|laser]] action in the semiconductor gallium arsenide"
+In September 1962 researchers from IBM, independently and almost simultaneously with researchers from [[General Electric (GE)|General Electric]] and MIT's Lincoln Laboratory, demonstrated [[Laser|laser]] action in the [[Semiconductors|semiconductor]] gallium arsenide.
-[[Category:Lasers,_lighting_&_electrooptics|Category:Lasers,_lighting_&amp;_electrooptics]] [[Category:Lasers]] [[Category:Semiconductor_lasers]]