Milestones:The Floating Gate EEPROM, 1976 - 1978
From ETHW
The Floating Gate EEPROM, 1976-1978
From 1976-1978, at Hughes Microelectronics in Newport Beach, California, the practicality, reliability, manufacturability and endurance of the Floating Gate EEPROM -- an electrically erasable device using a thin gate oxide and Fowler-Nordheim tunneling for writing and erasing -- was proven. As a significant foundation of data storage in flash memory, this fostered new classes of portable computing and communication devices which allow ubiquitous personal access to data.
