Milestones:The Floating Gate EEPROM, 1976 - 1978: Difference between revisions
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''The Floating Gate EEPROM, 1976-1978'' | |||
''From 1976-1978, at Hughes Microelectronics in Newport Beach, California, the practicality, reliability, manufacturability and endurance of the Floating Gate EEPROM -- an electrically erasable device using a thin gate oxide and Fowler-Nordheim tunneling for writing and erasing -- was proven. As a significant foundation of data storage in flash memory, this fostered new classes of portable computing and communication devices which allow ubiquitous personal access to data.'' | |||
[[Category:Components,_circuits,_devices_&_systems|{{PAGENAME}}]] | [[Category:Components,_circuits,_devices_&_systems|{{PAGENAME}}]] | ||
[[Category:Computers_and_information_processing|{{PAGENAME}}]] | [[Category:Computers_and_information_processing|{{PAGENAME}}]] | ||
Revision as of 18:57, 29 June 2012
The Floating Gate EEPROM, 1976-1978
From 1976-1978, at Hughes Microelectronics in Newport Beach, California, the practicality, reliability, manufacturability and endurance of the Floating Gate EEPROM -- an electrically erasable device using a thin gate oxide and Fowler-Nordheim tunneling for writing and erasing -- was proven. As a significant foundation of data storage in flash memory, this fostered new classes of portable computing and communication devices which allow ubiquitous personal access to data.
