Milestones:IBM Thomas J. Watson Research Center, 1960 - 1984

From ETHW
Revision as of 18:04, 26 October 2009 by Administrator4 (talk | contribs)

IBM Thomas J. Watson Research Center, 1960 - 1984

In its first quarter century, the IBM Thomas J. Watson Research Center produced numerous seminal advances having sustained worldwide impact in electrical engineering and computing. Semiconductor device innovations include dynamic random access memory (DRAM), superlattice crystals, and field effect transistor (FET) scaling laws. Computing innovations include reduced instruction set computer (RISC) architecture, integer programming, amorphous magnetic films for optical storage technology, and thin-film magnetic recording heads.