Mark Rodwell: Difference between revisions
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{{Biography | |||
|Image=Rodwell.jpg | |||
|Fields of study=Semiconductors | |||
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Mark J.W. Rodwell’s development of millimeter- and sub-millimeter-wave indium phosphide (InP) heterojunction bipolar transistors (HBTs) has extended the limits of high-frequency radio, high-speed optical communications and powerful imaging applications. During the mid 1990s, Dr. Rodwell sought a breakthrough in the InP HBT fabrication process to boost the device’s maximum frequency of oscillation and extend its circuit applications beyond microwave frequencies. [[Transistors]] and a series of circuits fundamental to high-frequency communications were subsequently demonstrated, establishing the feasibility of transistors with operating frequencies as high as 1–3 terahertz. Dr. Rodwell’s work has enabled development of ultra-high speed wireless radios/links in the previously never reached spectra of the “Terahertz Gap” for short-distance and portable communications and high-resolution cameras/imagers for detecting concealed objects. | Mark J.W. Rodwell’s development of millimeter- and sub-millimeter-wave indium phosphide (InP) heterojunction bipolar transistors (HBTs) has extended the limits of high-frequency radio, high-speed optical communications and powerful imaging applications. During the mid 1990s, Dr. Rodwell sought a breakthrough in the InP HBT fabrication process to boost the device’s maximum frequency of oscillation and extend its circuit applications beyond microwave frequencies. [[Transistors]] and a series of circuits fundamental to high-frequency communications were subsequently demonstrated, establishing the feasibility of transistors with operating frequencies as high as 1–3 terahertz. Dr. Rodwell’s work has enabled development of ultra-high speed wireless radios/links in the previously never reached spectra of the “Terahertz Gap” for short-distance and portable communications and high-resolution cameras/imagers for detecting concealed objects. | ||
An [[IEEE Fellow Grade History|IEEE Fellow]], Dr. Rodwell is currently a professor in the Department of Electrical and Computer Engineering and director of the Nanofabrication Laboratory at the University of California, Santa Barbara. | An [[IEEE Fellow Grade History|IEEE Fellow]], Dr. Rodwell is currently a professor in the Department of Electrical and Computer Engineering and director of the Nanofabrication Laboratory at the University of California, Santa Barbara. | ||
[[Category:Transistors]] | |||
[[Category: | [[Category:Transistors]] | ||
[[Category: | [[Category:Millimeter wave technology]] | ||
[[Category:Submillimeter wave technology]] | |||
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Latest revision as of 16:20, 4 February 2016
Biography
Mark J.W. Rodwell’s development of millimeter- and sub-millimeter-wave indium phosphide (InP) heterojunction bipolar transistors (HBTs) has extended the limits of high-frequency radio, high-speed optical communications and powerful imaging applications. During the mid 1990s, Dr. Rodwell sought a breakthrough in the InP HBT fabrication process to boost the device’s maximum frequency of oscillation and extend its circuit applications beyond microwave frequencies. Transistors and a series of circuits fundamental to high-frequency communications were subsequently demonstrated, establishing the feasibility of transistors with operating frequencies as high as 1–3 terahertz. Dr. Rodwell’s work has enabled development of ultra-high speed wireless radios/links in the previously never reached spectra of the “Terahertz Gap” for short-distance and portable communications and high-resolution cameras/imagers for detecting concealed objects.
An IEEE Fellow, Dr. Rodwell is currently a professor in the Department of Electrical and Computer Engineering and director of the Nanofabrication Laboratory at the University of California, Santa Barbara.
