Mark Rodwell: Difference between revisions
No edit summary |
No edit summary |
||
(One intermediate revision by one other user not shown) | |||
Line 1: | Line 1: | ||
== Biography == | == Biography == | ||
[[Image:Rodwell.jpg|thumb|right]] | |||
Mark J.W. Rodwell’s development of millimeter- and sub-millimeter-wave indium phosphide (InP) heterojunction bipolar transistors (HBTs) has extended the limits of high-frequency radio, high-speed optical communications and powerful imaging applications. During the mid 1990s, Dr. Rodwell sought a breakthrough in the InP HBT fabrication process to boost the device’s maximum frequency of oscillation and extend its circuit applications beyond microwave frequencies. [[Transistors]] and a series of circuits fundamental to high-frequency communications were subsequently demonstrated, establishing the feasibility of transistors with operating frequencies as high as 1–3 terahertz. Dr. Rodwell’s work has enabled development of ultra-high speed wireless radios/links in the previously never reached spectra of the “Terahertz Gap” for short-distance and portable communications and high-resolution cameras/imagers for detecting concealed objects. | Mark J.W. Rodwell’s development of millimeter- and sub-millimeter-wave indium phosphide (InP) heterojunction bipolar transistors (HBTs) has extended the limits of high-frequency radio, high-speed optical communications and powerful imaging applications. During the mid 1990s, Dr. Rodwell sought a breakthrough in the InP HBT fabrication process to boost the device’s maximum frequency of oscillation and extend its circuit applications beyond microwave frequencies. [[Transistors]] and a series of circuits fundamental to high-frequency communications were subsequently demonstrated, establishing the feasibility of transistors with operating frequencies as high as 1–3 terahertz. Dr. Rodwell’s work has enabled development of ultra-high speed wireless radios/links in the previously never reached spectra of the “Terahertz Gap” for short-distance and portable communications and high-resolution cameras/imagers for detecting concealed objects. | ||
Line 5: | Line 7: | ||
An [[IEEE Fellow Grade History|IEEE Fellow]], Dr. Rodwell is currently a professor in the Department of Electrical and Computer Engineering and director of the Nanofabrication Laboratory at the University of California, Santa Barbara. | An [[IEEE Fellow Grade History|IEEE Fellow]], Dr. Rodwell is currently a professor in the Department of Electrical and Computer Engineering and director of the Nanofabrication Laboratory at the University of California, Santa Barbara. | ||
[[Category:Transistors]] | [[Category:Transistors|Rodwell]] [[Category:Millimeter wave technology|Rodwell]] [[Category:Submillimeter wave technology|Rodwell]] | ||
[[Category: | |||
[[Category: |
Revision as of 18:14, 9 February 2012
Biography
Mark J.W. Rodwell’s development of millimeter- and sub-millimeter-wave indium phosphide (InP) heterojunction bipolar transistors (HBTs) has extended the limits of high-frequency radio, high-speed optical communications and powerful imaging applications. During the mid 1990s, Dr. Rodwell sought a breakthrough in the InP HBT fabrication process to boost the device’s maximum frequency of oscillation and extend its circuit applications beyond microwave frequencies. Transistors and a series of circuits fundamental to high-frequency communications were subsequently demonstrated, establishing the feasibility of transistors with operating frequencies as high as 1–3 terahertz. Dr. Rodwell’s work has enabled development of ultra-high speed wireless radios/links in the previously never reached spectra of the “Terahertz Gap” for short-distance and portable communications and high-resolution cameras/imagers for detecting concealed objects.
An IEEE Fellow, Dr. Rodwell is currently a professor in the Department of Electrical and Computer Engineering and director of the Nanofabrication Laboratory at the University of California, Santa Barbara.