Judy L. Hoyt: Difference between revisions
No edit summary |
No edit summary |
||
| (3 intermediate revisions by 2 users not shown) | |||
| Line 1: | Line 1: | ||
{{Biography | |||
|Associated organizations=MIT | |||
|Fields of study=Semiconductors | |||
}} | |||
The groundbreaking work of Judy L. Hoyt and [[Eugene A. Fitzgerald]] involving strained silicon [[Semiconductors|semiconductor]] materials has enabled the continued shrinking of [[Integrated Circuits|integrated circuits]], providing faster chips and devices. Based on Dr. Fitzgerald’s breakthrough of successfully fabricating strained (Si) on relaxed silicon germanium (SiGe) (stretching the Si crystal when applied to another material) in 1990, Dr. Hoyt and colleagues at Stanford pioneered the application of strained silicon to increase carrier transport properties in Si metal-oxide field-effect transistors (MOSFETs). In 1992, Dr. Hoyt used thin strained layers of Si on top of a relaxed SiGe artificial substrate to demonstrate the first fully functioning strained-channel MOSFETs. She later showed potential for the strain-engineered high-performance MOSFETs; results that inspired industry to harness strain in modern Si integrated circuits. Dr. Fitzgerald’s development of high mobility strained silicon on a low-defect relaxed SiGe spurred Dr. Hoyt’s work. He was able to solve defect formation problems to allow the joining of Si and Ge. He also demonstrated that highly strained materials could be deposited in small areas or, alternatively, strain-free SiGe could be deposited over large areas with a very low defect density. The ability to engineer highly relaxed and highly strained levels on Si led to Dr. Fitzgerald creating the first high-quality, high-mobility strained Si material. | The groundbreaking work of Judy L. Hoyt and [[Eugene A. Fitzgerald]] involving strained silicon [[Semiconductors|semiconductor]] materials has enabled the continued shrinking of [[Integrated Circuits|integrated circuits]], providing faster chips and devices. Based on Dr. Fitzgerald’s breakthrough of successfully fabricating strained (Si) on relaxed silicon germanium (SiGe) (stretching the Si crystal when applied to another material) in 1990, Dr. Hoyt and colleagues at Stanford pioneered the application of strained silicon to increase carrier transport properties in Si metal-oxide field-effect transistors (MOSFETs). In 1992, Dr. Hoyt used thin strained layers of Si on top of a relaxed SiGe artificial substrate to demonstrate the first fully functioning strained-channel MOSFETs. She later showed potential for the strain-engineered high-performance MOSFETs; results that inspired industry to harness strain in modern Si integrated circuits. Dr. Fitzgerald’s development of high mobility strained silicon on a low-defect relaxed SiGe spurred Dr. Hoyt’s work. He was able to solve defect formation problems to allow the joining of Si and Ge. He also demonstrated that highly strained materials could be deposited in small areas or, alternatively, strain-free SiGe could be deposited over large areas with a very low defect density. The ability to engineer highly relaxed and highly strained levels on Si led to Dr. Fitzgerald creating the first high-quality, high-mobility strained Si material. | ||
| Line 7: | Line 9: | ||
{{DEFAULTSORT:Hoyt}} | {{DEFAULTSORT:Hoyt}} | ||
[[Category: | [[Category:Computing and electronics]] | ||
[[Category:Electron_devices]] | [[Category:Electron_devices]] | ||
[[Category:Semiconductor_devices]] | [[Category:Semiconductor_devices]] | ||
Latest revision as of 20:38, 1 February 2016
- Associated organizations
- MIT
- Fields of study
- Semiconductors
Biography
The groundbreaking work of Judy L. Hoyt and Eugene A. Fitzgerald involving strained silicon semiconductor materials has enabled the continued shrinking of integrated circuits, providing faster chips and devices. Based on Dr. Fitzgerald’s breakthrough of successfully fabricating strained (Si) on relaxed silicon germanium (SiGe) (stretching the Si crystal when applied to another material) in 1990, Dr. Hoyt and colleagues at Stanford pioneered the application of strained silicon to increase carrier transport properties in Si metal-oxide field-effect transistors (MOSFETs). In 1992, Dr. Hoyt used thin strained layers of Si on top of a relaxed SiGe artificial substrate to demonstrate the first fully functioning strained-channel MOSFETs. She later showed potential for the strain-engineered high-performance MOSFETs; results that inspired industry to harness strain in modern Si integrated circuits. Dr. Fitzgerald’s development of high mobility strained silicon on a low-defect relaxed SiGe spurred Dr. Hoyt’s work. He was able to solve defect formation problems to allow the joining of Si and Ge. He also demonstrated that highly strained materials could be deposited in small areas or, alternatively, strain-free SiGe could be deposited over large areas with a very low defect density. The ability to engineer highly relaxed and highly strained levels on Si led to Dr. Fitzgerald creating the first high-quality, high-mobility strained Si material.
An IEEE Fellow, Dr. Hoyt is a professor of electrical engineering and computer science at the Massachusetts Institute of Technology (MIT) in Cambridge, and associate director of MIT’s Microsystems Technologies Laboratories.
