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Seeing the importance of silicon-on-insulator (SOI) technology early on when others did not, Jean-Paul Colinge has been one of SOI’s strongest advocates with innovative contributions that have resulted in its widespread use. Dr. Colinge developed thin-film fully depleted SOI devices during the 1980s. He also invented the gate all-around device in 1990, which has become the ultimate silicon transistor. Also during the 1990s, Dr. Colinge fabricated the first nanowire transistors and explained their quantum effects. His pioneering work on advanced nanowire semiconductor devices has led to multiple-gate field-effect transistors. Today, Dr. Colinge continues to investigate multigate SOI technology for scaling to extremely small dimensions. His invention of a junctionless nanowire transistor in 2010 shows the potential for fabricating SOI devices with dimensions down to 5 nanometers. Dr. Colinge has educated countless engineers with "Silicon on Insulator Technology: From Materials to VLSI" (Kluwer Academic, 1991), which still serves as the standard introduction to SOI.
An IEEE Fellow, Dr. Colinge is currently with the Taiwan Semiconductor Manufacturing Company (TSMC) in Hsinchu, Taiwan.