Harold M. Manasevit: Difference between revisions
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Harold M. Manasevit was born on November 1, 1927 in Bridgeport, Connecticut. He received his B.S. and M.S. in Chemistry from Ohio University (1950) and Pennsylvania State University (1951), and his PhD in Physical Inorganic Chemistry from the Illinois Institute of Technology (1959). In 1959, he joined the US Borax Research Corp. in Anaheim, California. One year later he joined the North American Aviation Company. In 1983, Manasevit began at TRW as a senior scientist. | Harold M. Manasevit was born on November 1, 1927 in Bridgeport, Connecticut. He received his B.S. and M.S. in Chemistry from Ohio University (1950) and Pennsylvania State University (1951), and his PhD in Physical Inorganic Chemistry from the Illinois Institute of Technology (1959). In 1959, he joined the US Borax Research Corp. in Anaheim, California. One year later he joined the North American Aviation Company. In 1983, Manasevit began at TRW as a senior scientist. | ||
Manasevit focused much of his research on Chemical Vapor Deposition (CVD), and was a pioneer within this field. He was known for being the first person to record epitaxial growth of silicon on sapphire, known as SOS (1963), and was also the first to publish a work on metalorganic chemical vapor deposition (MOCVD)regarding the epitaxial growth of GaAs (1968). Manasevit also holds 16 patents. In 1985 he, along with Russell D. Dupuis, received the IEEE Morris N. Liebmann Memorial Award "For pioneering work in metalorganic chemical vapor deposition, epitaxial-crystal reactor design, and demonstration of superior quality semiconductor devices grown by this process." | Manasevit focused much of his research on Chemical Vapor Deposition (CVD), and was a pioneer within this field. He was known for being the first person to record epitaxial growth of silicon on sapphire, known as SOS (1963), and was also the first to publish a work on metalorganic chemical vapor deposition (MOCVD)regarding the epitaxial growth of GaAs (1968). Manasevit also holds 16 patents. In 1985 he, along with Russell D. Dupuis, received the [[IEEE Morris N. Liebmann Memorial Award|IEEE Morris N. Liebmann Memorial Award]] "For pioneering work in metalorganic chemical vapor deposition, epitaxial-crystal reactor design, and demonstration of superior quality semiconductor devices grown by this process." | ||
Manasevit died on March 25, 2008. | Manasevit died on March 25, 2008. | ||
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Revision as of 14:43, 17 September 2013
Biography
Harold M. Manasevit was born on November 1, 1927 in Bridgeport, Connecticut. He received his B.S. and M.S. in Chemistry from Ohio University (1950) and Pennsylvania State University (1951), and his PhD in Physical Inorganic Chemistry from the Illinois Institute of Technology (1959). In 1959, he joined the US Borax Research Corp. in Anaheim, California. One year later he joined the North American Aviation Company. In 1983, Manasevit began at TRW as a senior scientist.
Manasevit focused much of his research on Chemical Vapor Deposition (CVD), and was a pioneer within this field. He was known for being the first person to record epitaxial growth of silicon on sapphire, known as SOS (1963), and was also the first to publish a work on metalorganic chemical vapor deposition (MOCVD)regarding the epitaxial growth of GaAs (1968). Manasevit also holds 16 patents. In 1985 he, along with Russell D. Dupuis, received the IEEE Morris N. Liebmann Memorial Award "For pioneering work in metalorganic chemical vapor deposition, epitaxial-crystal reactor design, and demonstration of superior quality semiconductor devices grown by this process."
Manasevit died on March 25, 2008.
