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Dimitri A. Antoniadis

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In 1978, Dr. Antoniadis joined the faculty at MIT where co-founded and was the first Director of the MIT Microsystems Technology Laboratories. He later directed the SRC MIT Center of Excellence for Microsystems Technology. Currently, he holds the Ray and Maria Stata Chair in Electrical Engineering and directs the Multi-University Focus Research Center for Materials Structures and Devices.
 
In 1978, Dr. Antoniadis joined the faculty at MIT where co-founded and was the first Director of the MIT Microsystems Technology Laboratories. He later directed the SRC MIT Center of Excellence for Microsystems Technology. Currently, he holds the Ray and Maria Stata Chair in Electrical Engineering and directs the Multi-University Focus Research Center for Materials Structures and Devices.
  
Dr. Antoniadis is a Fellow of the IEEE. His awards include the IEEE Paul Rappaport Award and the Solid State Science and Technology Young Author Award of the Electrochemical Society. At the IEEE, he has served as Editor of the IEEE Transactions on Electron Devices, and on various technical committees.
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Dr. Antoniadis is a [[IEEE Fellow Grade History|Fellow of the IEEE]]. His awards include the IEEE Paul Rappaport Award and the Solid State Science and Technology Young Author Award of the Electrochemical Society. At the IEEE, he has served as Editor of the IEEE Transactions on Electron Devices, and on various technical committees.
  
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[[Category:Components, circuits, devices & systems|Antoniadis]]
 
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Revision as of 19:11, 11 January 2012

Biography

Known for his intuitive approach to complex technologies, Dr. Dimitri A. Antoniadis has had a tremendous effect on several areas of microelectronics technology, especially in field-effect controlled, quantum-effect devices and silicon process modeling.

At Stanford in the mid-1970s, Dr. Antoniadis played a key role in developing the SUPREM I and II, which became the first widely used process simulation tools in industry and the basis of programs in use today.. After joining the faculty of the Massachusetts Institute of Technology (MIT) in 1978, Dr. Antoniadis led a program that proved and quantified the dual, vacancy-interstitialcy diffusion mechanism of substitutional dopant atoms in Si. This dual diffusion model remains at the core of all modern process simulators.

In the 1980s, Dr. Antoniadis, with his colleagues at MIT, established a bold research program into field-effect devices that took advantage of cutting-edge extreme sub-micron lithography techniques. The program produced many groundbreaking demonstrations, including those of lateral-surface superlattice and quasi-one-dimensional channels in silicon and GaAs, and the first silicon single-electron transistor.

Working with his students, Dr. Antoniadis has made many pioneering contributions to Bulk-Silicon and Silicon-on-Insulator MOSFET research that had major impact on key aspects of device design for today’s high perfomance silicon MOSFETs. His current research focuses on the physics and technology of extreme-submicron Si, SOI and Si/SiGe MOSFETS. He is author and co-author of more than 200 technical articles.

Dimitri A. Antoniadis was born on 1 January 1947, in Athens, Greece. He received his B.S. in Physics from the National University of Athens in 1970, and his Ph.D. in Electrical Engineering from Stanford University in 1976.

In 1978, Dr. Antoniadis joined the faculty at MIT where co-founded and was the first Director of the MIT Microsystems Technology Laboratories. He later directed the SRC MIT Center of Excellence for Microsystems Technology. Currently, he holds the Ray and Maria Stata Chair in Electrical Engineering and directs the Multi-University Focus Research Center for Materials Structures and Devices.

Dr. Antoniadis is a Fellow of the IEEE. His awards include the IEEE Paul Rappaport Award and the Solid State Science and Technology Young Author Award of the Electrochemical Society. At the IEEE, he has served as Editor of the IEEE Transactions on Electron Devices, and on various technical committees.