David Harame: Difference between revisions
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An [[IEEE Fellow Grade History|IEEE]] and IBM Fellow, Dr. Harame has received two IBM Outstanding Innovation Awards. | An [[IEEE Fellow Grade History|IEEE]] and IBM Fellow, Dr. Harame has received two IBM Outstanding Innovation Awards. | ||
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Revision as of 15:31, 11 January 2012
Biography
Dr. David L. Harame led the development of the world's first successful silicon germanium (SiGe) technology generally available for analog and communications circuits used in wireless communications equipment, optical network interfaces,GPS and cellular telephones. Dr. Harame was the first to make SiGe devices using ultra high-vacuum chemical vapor deposition to deposit the SiGe layer. The technologies he developed and later installed in IBM's Essex Junction, Vermont manufacturing facility in 1998, set records for the performance of silicon bipolar transistors and is still running in high volume today. Based on his work, SiGe HBTs now exceed frequencies of 390 GHz. This enables products based on existing compound semiconductor technology to be replaced with higher-performance,lower-power and lower-cost SiGe HBT technology commonly used in many products containing high-frequency analog circuits such as cell phone, WLAN, high-speed test and fiber optic applications.
An IEEE and IBM Fellow, Dr. Harame has received two IBM Outstanding Innovation Awards.
