CMOS
From GHN
(Difference between revisions)
(New page: '''''This article is a stub. You can help the GHN by expanding it.''''' At a meeting in October 1968 the Westinghouse Molecular Electronics division announced a new type of field-effect t...) |
|||
| (5 intermediate revisions by 3 users not shown) | |||
| Line 1: | Line 1: | ||
| − | '''''This article is a stub. You can help the GHN by expanding it.''''' | + | <p>'''''This article is a stub. You can help the GHN by expanding it.''''' </p> |
| − | At a meeting in October 1968 the Westinghouse Molecular Electronics division announced a new type of field-effect transistor, the CMOS (Complementary Metal-Oxide-Semiconductor). Its much lower power usage makes portable devices more viable, and | + | <p>At a meeting in October 1968 the Westinghouse Molecular Electronics division announced a new type of field-effect transistor, the CMOS (Complementary Metal-Oxide-Semiconductor). Its much lower power usage makes portable devices more viable, and enables efficient, low power, memory storage. </p> |
| + | |||
| + | <p>[[Image:Cmos.PNG|thumb|center|Side view of a CMOS transistor]]</p> | ||
| + | |||
| + | [[Category:Components,_circuits,_devices_&_systems]] | ||
| + | [[Category:Integrated_circuits]] | ||
| + | [[Category:CMOS_integrated_circuits_&_microprocessors]] | ||
Latest revision as of 19:55, 26 July 2012
This article is a stub. You can help the GHN by expanding it.
At a meeting in October 1968 the Westinghouse Molecular Electronics division announced a new type of field-effect transistor, the CMOS (Complementary Metal-Oxide-Semiconductor). Its much lower power usage makes portable devices more viable, and enables efficient, low power, memory storage.
