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| == Beam Lead Technology == | | == Beam Lead Technology == |
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| <br><meta content="text/html; charset=utf-8" http-equiv="Content-Type"></meta><meta content="Word.Document" name="ProgId"></meta><meta content="Microsoft Word 10" name="Generator"></meta><meta content="Microsoft Word 10" name="Originator"></meta><link href="file:///C:\DOCUME~1\Marty\LOCALS~1\Temp\msohtml1\01\clip_filelist.xml" rel="File-List"></link><!--[if gte mso 9]><xml> | | <br>Beam Lead Technology is the name given to the structure and method of micro-fabricating a semiconductor device structure. Its original application was to high-frequency silicon switching transistors and ultra-high-speed integrated circuits.<span style=""> </span> <span>In the early 1960's Lepselter<sup>1, 2</sup><span style=""> </span>developed the <span style=""> </span>techniques for fabricating a structure consisting of electroforming an array of thick, self-supporting gold patterns on a thin film Ti-Pt Au base, hence the name "beams", deposited on the surface of a silicon wafer . The excess semiconductor from under the beams was removed, thereby separating the individual devices and leaving them with self-supporting beam leads or internal chiplets cantilevered beyond the semiconductor. The contacts served as electrical leads in addition to also serving the purpose of structural support for the devices. </span> |
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| <![endif]--> Beam Lead Technology is the name given to the structure and method of micro-fabricating a semiconductor device structure. Its original application was to high-frequency silicon switching transistors and ultra-high-speed integrated circuits.<span style=""> </span> <span>In the early 1960's Lepselter<sup>1, 2</sup><span style=""> </span>developed the <span style=""> </span>techniques for fabricating a structure consisting of electroforming an array of thick, self-supporting gold patterns on a thin film Ti-Pt Au base, hence the name "beams", deposited on the surface of a silicon wafer . The excess semiconductor from under the beams was removed, thereby separating the individual devices and leaving them with self-supporting beam leads or internal chiplets cantilevered beyond the semiconductor. The contacts served as electrical leads in addition to also serving the purpose of structural support for the devices. </span>
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| <span></span><span>[BSTJ_Beam_Lead_Technology.pdf]</span>[[Image:BSTJ Beam Lead Technology.pdf|center|BSTJ article]][original IEEE paper.pdf][[Image:Original_IEEE_paper-1965.PDF]]<br>
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| | <span></span><span>[BSTJ_Beam_Lead_Technology.pdf]</span>[[Image:BSTJ Beam Lead Technology.pdf|center|BSTJ article]][original IEEE paper.pdf][[Image:Original IEEE paper-1965.PDF|Image:Original_IEEE_paper-1965.PDF]]<br> |
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| <span></span> | | <span></span> |
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| [[Category:Components,_circuits,_devices_&_systems|Category:Components,_circuits,_devices_&_systems]] [[Category:Integrated_circuits]] | | [[Category:Components,_circuits,_devices_&_systems|Category:Components,_circuits,_devices_&_systems]] [[Category:Integrated_circuits]] |
Beam Lead Technology
Beam Lead Technology is the name given to the structure and method of micro-fabricating a semiconductor device structure. Its original application was to high-frequency silicon switching transistors and ultra-high-speed integrated circuits. In the early 1960's Lepselter1, 2 developed the techniques for fabricating a structure consisting of electroforming an array of thick, self-supporting gold patterns on a thin film Ti-Pt Au base, hence the name "beams", deposited on the surface of a silicon wafer . The excess semiconductor from under the beams was removed, thereby separating the individual devices and leaving them with self-supporting beam leads or internal chiplets cantilevered beyond the semiconductor. The contacts served as electrical leads in addition to also serving the purpose of structural support for the devices.
[BSTJ_Beam_Lead_Technology.pdf]File:BSTJ Beam Lead Technology.pdf[original IEEE paper.pdf]File:Original IEEE paper-1965.PDF
