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Beam Lead Technology

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== Beam Lead Technology  ==
 
== Beam Lead Technology  ==
  
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<![endif]--> Beam Lead Technology is the name given to the structure and method of micro-fabricating a semiconductor device structure. Its original application was to high-frequency silicon switching transistors and ultra-high-speed integrated circuits.<span style="">&nbsp; </span> <span>In the early 1960's Lepselter<sup>1, 2</sup><span style="">&nbsp; </span>developed the <span style="">&nbsp;</span>techniques for fabricating a structure consisting of electroforming an array of thick, self-supporting gold patterns on a thin film Ti-Pt Au base, hence the name "beams", deposited on the surface of a silicon wafer . The excess semiconductor from under the beams was removed, thereby separating the individual devices and leaving them with self-supporting beam leads or internal chiplets cantilevered beyond the semiconductor. The contacts served as electrical leads in addition to also serving the purpose of structural support for the devices. </span>
Beam Lead Technology is the name given to the structure and method of micro-fabricating a semiconductor device structure. Its original application was to high-frequency silicon switching transistors and ultra-high-speed integrated circuits.<span style="">&nbsp; </span>
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<span style="font-size: 12pt; font-family: &quot;Times New Roman";">In the early 1960's Lepselter<sup>1, 2</sup><span style="">&nbsp; </span>developed the <span style="">&nbsp;</span>techniques for fabricating a structure consisting of electroforming an array of thick, self-supporting gold patterns on a thin film Ti-Pt Au base, hence the name "beams", deposited on the surface of a silicon wafer . The excess semiconductor from under the beams was removed, thereby separating the individual devices and leaving them with self-supporting beam leads or internal chiplets cantilevered beyond the semiconductor. The contacts served as electrical leads in addition to also serving the purpose of structural support for the devices. </span>
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[[Category:Components%2C_circuits%2C_devices_%26_systems]]
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[[Category:Integrated_circuits]]

Revision as of 17:16, 5 April 2009

Beam Lead Technology


<meta content="text/html; charset=utf-8" http-equiv="Content-Type"></meta><meta content="Word.Document" name="ProgId"></meta><meta content="Microsoft Word 10" name="Generator"></meta><meta content="Microsoft Word 10" name="Originator"></meta><link href="file:///C:\DOCUME~1\Marty\LOCALS~1\Temp\msohtml1\01\clip_filelist.xml" rel="File-List"></link><style><!-- /* Style Definitions */ p.MsoNormal, li.MsoNormal, div.MsoNormal {mso-style-parent:""; margin:0in; margin-bottom:.0001pt; mso-pagination:widow-orphan; font-size:12.0pt; font-family:"Times New Roman"; mso-fareast-font-family:"Times New Roman";} p {mso-margin-top-alt:auto; margin-right:0in; mso-margin-bottom-alt:auto; margin-left:0in; mso-pagination:widow-orphan; font-size:12.0pt; font-family:"Times New Roman"; mso-fareast-font-family:"Times New Roman";} @page Section1 {size:8.5in 11.0in; margin:1.0in 1.25in 1.0in 1.25in; mso-header-margin:.5in; mso-footer-margin:.5in; mso-paper-source:0;} div.Section1 {page:Section1;} --> </style> Beam Lead Technology is the name given to the structure and method of micro-fabricating a semiconductor device structure. Its original application was to high-frequency silicon switching transistors and ultra-high-speed integrated circuits.  In the early 1960's Lepselter1, 2  developed the  techniques for fabricating a structure consisting of electroforming an array of thick, self-supporting gold patterns on a thin film Ti-Pt Au base, hence the name "beams", deposited on the surface of a silicon wafer . The excess semiconductor from under the beams was removed, thereby separating the individual devices and leaving them with self-supporting beam leads or internal chiplets cantilevered beyond the semiconductor. The contacts served as electrical leads in addition to also serving the purpose of structural support for the devices.